Search results for "Ion beam lithography"
showing 10 items of 22 documents
Development of procedures for programmable proximity aperture lithography
2013
Abstract Programmable proximity aperture lithography (PPAL) with MeV ions has been used in Jyvaskyla and Chiang Mai universities for a number of years. Here we describe a number of innovations and procedures that have been incorporated into the LabView-based software. The basic operation involves the coordination of the beam blanker and five motor-actuated translators with high accuracy, close to the minimum step size with proper anti-collision algorithms. By using special approaches, such writing calibration patterns, linearisation of position and careful backlash correction the absolute accuracy of the aperture size and position, can be improved beyond the standard afforded by the repeata…
Advanced time-stamped total data acquisition control front-end for MeV ion beam microscopy and proton beam writing
2013
Many ion-matter interactions exhibit [email protected] time dependences such as, fluorophore emission quenching and ion beam induced charge (IBIC). Conventional event-mode MeV ion microbeam data acquisition systems discard the time information. Here we describe a fast time-stamping data acquisition front-end based on the concurrent processing capabilities of a Field Programmable Gate Array (FPGA). The system is intended for MeV ion microscopy and MeV ion beam lithography. The speed of the system (>240,000 events s^-^1 for four analogue to digital converters (ADC)) is limited by the ADC throughput and data handling speed of the host computer.
Lithographic fabrication of soda-lime glass based microfluidics
2013
Abstract Glass is an important material for chemical processing and analysis because of its relatively low cost, mechanical strength, chemical inertness, optical transparency, and electrical insulation and temperature resistance far beyond that of most polymeric materials. We have investigated techniques for direct writing with MeV ions on soda-lime glass as well as capping procedures to form closed buried channels suitable for high-pressure driven flow. Exposure and development of open-channel structures was studied using a combination of programmable proximity aperture lithography and different developers. Unlike our previous work on MeV ion beam lithography of natural silica where an 8% …
One dimensional arrays and solitary tunnel junctions in the weak coulomb blockade regime: CBT thermometry
1997
In this article we review the use of the tunnel junction arrays for primary thermometry. In addition to our basic experimental and theoretical results we stress the insensitivity of this method to the fluctuating background charges, to nonidealities in the array and to magnetic field. Important new results of this article are the low temperature corrections to the half width and depth of the measured conductance dip beyond the linear approximation. We also point ou that short arrays, single tunnel junctions in particular, show interesting deviations from the universal behaviour of the long arrays.
Why are hydrogen ions best for MeV ion beam lithography?
2013
The exposure characteristics of poly-(methyl methacrylate) (PMMA) for 2MeV ^1H^+, 3MeV ^4He^2^+ and 6MeV ^1^2C^3^+ have been investigated. The samples were characterised using Atomic Force Microscopy (AFM), optical microscopy and Raman spectroscopy. Development was carried out using a 7:3 propan-2-ol:H"2O mixture to determine clearing and cross-linking fluences. It was found that protons had a considerably wider tolerance to exposure variations and a smaller span of doses within the ion track. Furthermore, the void formation and consequent stress-induced surface roughening were smaller for protons. For all ions, the C?C bond Raman signal increased continuously with dose and fluence, even we…
High speed microfluidic prototyping by programmable proximity aperture MeV ion beam lithography
2013
Abstract Microfluidics refers to the science and technology for controlling and manipulating fluids that flow along microchannels. For the development of complex prototypes, many microfluidic test structures are required first. Normally, these devices are fabricated via photolithography. This technique requires a photomask for transferring a pattern to photoresists by exposing with UV light. However, this method can be slow when a new structure is required to change. This is because a series of photomasks are needed, which is time consuming and costly. Here, we present a programmable proximity aperture lithography (PPAL) technique for the development of microfluidic prototype in poly(methyl…
Development of a MeV ion beam lithography system in Jyväskylä
2007
A lithographic facility for writing patterns with ion beams from cyclotron beams is under development for the Jyväskylä cyclotron. Instead of focusing and deflecting the beam with electrostatic and magnetic fields a different approach is used. Here a small rectangular beam spot is defined by the shadow of a computer-controlled variable aperture in close proximity to the sample. This allows parallel exposure of rectangular pattern elements of 5–500 μm side with protons up to 6 MeV and heavy ions (20Ne, 85Kr) up to few 100 MeV. Here we present a short overview of the system under construction and development of the aperture design, which is a critical aspect for all ion beam lithography syste…
Aperture-edge scattering in MeV ion-beam lithography. I. Scattering from a straight Ta aperture edge
2009
Collimators are widely used to define MeV ion beams. Recent studies have shown the capability of collimators to define beams of MeV ions with sub-100nm dimensions. Such nanometer beams have potential applications in MeV ion-beam lithography, which is the only maskless technique capable of producing extremely high aspect-ratio micro- and nanostructrures, as well as in high-resolution MeV ion-beam-based tomography. The ion scattering from the collimator edges that define the beam can be a resolution-restricting factor in these applications. Scattering processes at edges are difficult to study using conventional simulation codes because of the complicated geometry. In this part of the work, th…
Direct Writing of Channels for Microfluidics in Silica by MeV Ion Beam Lithography
2011
The lithographic exposure characteristic of amorphous silica (SiO2) was investigated for 6.8 MeV16O3+ions. A programmable proximity aperture lithography (PPAL) technique was used for the ion beam exposure. After exposure, the exposed pattern was developed by selective etching in 4% v/v HF. Here, we report on the development of SiO2in term of the etch depth dependence on the ion fluence. This showed an exponential approach towards a constant asymptotic etch depth with increasing ion fluence. An example of microfluidic channels produced by this technique is demonstrated.
Fabrication of microfluidic devices using MeV ion beam Programmable Proximity Aperture Lithography (PPAL)
2008
Abstract MeV ion beam lithography is a direct writing technique capable of producing microfluidic patterns and lab-on-chip devices with straight walls in thick resist films. In this technique a small beam spot of MeV ions is scanned over the resist surface to generate a latent image of the pattern. The microstructures in resist polymer can be then revealed using a chemical developer that removes exposed resist, while leaving unexposed resist unaffected. In our system the size of the rectangular beam spot is programmably defined by two L-shaped tantalum blades with well-polished edges. This allows rapid exposure of entire rectangular pattern elements up to 500 × 500 μm in one step. By combin…